Semiconductor integrated circuit and its manufacturing method

Details Semiconductor integrated circuit and its manufacturing method Semiconductor integrated circuit and its manufacturing method

1989-08-21

1990-03-20

Hille, Rolf

357 55, 357 50, 357 34, H01L 2712, H01L 2906, H01L 2704, H01L 2972

Patent

active

049105752

ABSTRACT:
A semiconductor integrated circuit device includes first and second grooves extending in a silicon semiconductor substrate, a shallow groove extending between the first and second grooves and contiguous with the first and second grooves, and insulating material occupying the first and second deep grooves and said shallow groove. Accordingly, by forming grooves having two different depths, the deep groove can be filled without increasing the thickness of the insulating layer, and moreoever, an insulating isolation region having a flat upper surface can be obtained.

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patent: 4733287 (1988-03-01), Bower
patent: 4819054 (1989-04-01), Kawaji et al.

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