Thin film growth using two part metal solvent

Details Thin film growth using two part metal solvent Thin film growth using two part metal solvent

1993-02-18

1994-07-05

Owens, Terry J.

Fishing, trapping, and vermin destroying

437 2, 136261, 427 74, 117 79, 117931, H01L 21208

Patent

active

053267192

ABSTRACT:
A method of coating a material surface with thin film silicon comprises dissolving silicon in a metal solvent to form a solution and subsequently deposited the dissolved silicon from the solution by controlling the temperature of the solution and thereby depositing a layer of silicon onto the material surface. The metal solvent is preferably a mixture of gold and a metal or metals which either have a melting point below the deposition temperature range or which form a eutectic with gold and have a eutectic temperature below the deposition temperature range. The temperature of the solution is controlled so that the silicon becomes super saturated in the solution and is deposited out of solution onto the material surface.

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