Method of making a fully used tub DRAM cell

Details Method of making a fully used tub DRAM cell Method of making a fully used tub DRAM cell

1993-07-22

1994-07-05

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437162, 437200, H01L 2170

Patent

active

053267141

ABSTRACT:
A method is described for forming a dynamic random access memory cell capacitor in which a polysilicon spacer is formed on top of the bottom polysilicon electrode to construct a tub shape and a wet dip is used to remove silicon oxide from cavities under the bottom polysilicon electrode, increasing the overlap with the top polysilicon electrode and thus increasing the surface area of the capacitor without increasing the area on the substrate occupied by the capacitor.

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