Layer structure of a memory cell for a dynamic random access mem

Details Layer structure of a memory cell for a dynamic random access mem Layer structure of a memory cell for a dynamic random access mem

1988-11-10

1990-03-20

James, Andrew J.

357 59, 357 71, 357 51, H01L 2710

Patent

active

049105663

ABSTRACT:
A layer structure of a memory cell for a dynamic random access memory device includes a semiconductor substrate, an insulation film formed on the semiconductor substrate having a first window through which a surface of the semiconductor substrate is partially exposed, a first conductive film formed on the insulation film so as to surround the contact window and form a second window above the first window, a second conductive film formed so as to be in contact with the first conductive film, and the semiconductor substrate through the first and second windows, the first and second conductive films constructing a storage electrode of a memory cell capacitor, a dielectric film formed so as to cover the storage electrode; and a third conductive film formed so as to cover the dielectric film.

REFERENCES:
patent: 4649406 (1987-03-01), Takemae
patent: 4812885 (1989-03-01), Riemenschneider

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