Highly integrated field effect transistor and method for manufac

Details Highly integrated field effect transistor and method for manufac Highly integrated field effect transistor and method for manufac

1988-06-30

1990-03-20

James, Andrew J.

357 55, 357 42, 357 49, H01L 2978

Patent

active

049105647

ABSTRACT:
A field effect transistor has its channel region and source drain regions extending in a direction approximately vertical to a main surface of a substrate. The field effect transistor may be a complementary type in which p type and n type transistors are formed as a pair. The channel region and the source drain regions may be placed side by side in the direction of the main surface of the substrate or they may be placed side by side in the direction of the depth of the substrate. In such transistors, each of the regions is formed by stepup implantation carried out by stepup voltage of the corresponding ion beam.

REFERENCES:
patent: 4663644 (1987-05-01), Shimizu
patent: 4670768 (1987-06-01), Sunami

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