Polysilicon-collector-on-insulator polysilicon-emitter bipolar

Details Polysilicon-collector-on-insulator polysilicon-emitter bipolar Polysilicon-collector-on-insulator polysilicon-emitter bipolar

1993-02-02

1994-06-07

Davie, James W.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With means to increase inverse gain

257565, H01L 2972

Patent

active

053192397

ABSTRACT:
A bipolar transistor is described having a thin subcollector formed from alternating polycrystalline semiconductor material and silicide material disposed over an insulating layer. Because the subcollector is thin the transistor is less sensitive to alpha-particle events. The transistor has enhanced inverse current gain since there is a polycrystalline contact to the incerse emitter.

REFERENCES:
patent: 3579058 (1968-02-01), Armgarth
patent: 4532003 (1985-07-01), Beason
patent: 4794445 (1988-12-01), Homm et al.
Hulvey, M.D. et al., "Dielectric Isolation Process", IBM Technical Disclosure Bulletin, vol. 24, No. 11A, Apr. 1982, pp. 5458-5459.

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