Method of fabricating an ion sensitive field effect transistor w

Details Method of fabricating an ion sensitive field effect transistor w Method of fabricating an ion sensitive field effect transistor w

1992-03-05

1994-06-07

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

437 29, 437192, 437235, 437247, 437913, 257414, H01L 21265

Patent

active

053192265

ABSTRACT:
A fabricating method of an ion sensitive field effect transistor (ISFET) with a Ta.sub.2 O.sub.5 hydrogen ion sensing membrane, which comprises the steps of forming Ta.sub.2 O.sub.5 film with a thickness of about 400 to 500 A by RF reactive sputtering on a Si.sub.3 N.sub.4 /SiO.sub.2 gate dielectric layer of the pH-ISFET, and annealing the resultant film at about 375.degree. to 450.degree. C. in oxygen gas ambience for about one hour. In forming the Ta.sub.2 O.sub.5 film on the pH-ISFET, the Ta.sub.2 O.sub.5 film formed in the area except the gate region of the pH-ISFET is removed by a lift-off process utilizing a positive PR film. The Ta.sub.2 O.sub.5 gate pH-ISFET according to the present invention has higher sensitivity and more stable operation characteristics than those of the conventional pH-ISFET, while the productivity and stability thereof are greatly improved by effecting a whole wafer process.

REFERENCES:
patent: 3358223 (1967-12-01), Birnstingl
patent: 3873361 (1975-03-01), Franco et al.
patent: 4233033 (1980-11-01), Eifler
patent: 4333808 (1982-06-01), Bhattacharyya
patent: 4374013 (1983-02-01), Enfors
patent: 4385274 (1983-05-01), Shimada
patent: 4495219 (1985-01-01), Kato et al.
patent: 4513280 (1985-04-01), Hannan
patent: 4657658 (1987-04-01), Sibbald
patent: 4812220 (1989-03-01), Iida
patent: 4839000 (1989-06-01), Eddowes
patent: 5132012 (1992-07-01), Miura et al.

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