Method for incrementally increasing the collector area of a late

Fishing – trapping – and vermin destroying

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437170, 437 32, 437923, 437 8, 357 46, 357 35, 357 13, H01L 2972

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049101595

ABSTRACT:
The collector area of a lateral PNP transistor may be incrementally increased during an electic testing step on wafer of an integrated circuit by purposely forming an auxiliary p-type diffused collector region having fractional dimensions near the primary collector region of the transistor and by permanently shorcircuiting the two regions by means of a "Zener zapping" technique, by forcing a current through the inversely biased base-collector junction utilizing a suitable contact pad connected to the auxiliary collector region to create localized power dissipation conditions sufficient to melt the metal of the respective metal at the adjacent contacts and to form a permanent connection between the two metals. The technique is very useful for adjusting the value of the output current(s) in precision current generating circuits.

REFERENCES:
patent: 3761787 (1973-09-01), Davis et al.
patent: 3958267 (1976-05-01), Frederiksen et al.
patent: 4071778 (1978-01-01), Nakagami
patent: 4451839 (1984-05-01), Nelson
patent: 4646427 (1987-03-01), Doyle
patent: 4730127 (1988-03-01), Susak
patent: 4775884 (1988-10-01), Erdi
patent: 4820657 (1989-04-01), Hughes et al.

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