Photomask and method for manufacturing semiconductor device usin

Details Photomask and method for manufacturing semiconductor device usin Photomask and method for manufacturing semiconductor device usin

1992-05-15

1994-06-07

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, 430320, G03F 900

Patent

active

053188683

ABSTRACT:
A photomask which is suitable for a phase shift method and a method for manufacturing a semiconductor device using the photomask is disclosed. The photomask comprises a transparent area, a translucent area and an opaque are arranged in a particular manner relative to a shifter film. In particular, the different elements are arranged so that the lowering of intensity and the amplitude of a transmitted light in the transparent area caused by an unnecessary peripheral part of a shifter film are smaller than the lowering of the intensity and the amplitude of a transmitted light through a transparent area. This serves to prevent an undesirable influence of the unnecessary peripheral part of so that a shifter film can reading be prevented, and a connected pattern can be formed.

REFERENCES:
patent: 4904569 (1990-02-01), Fukuda et al.
patent: 5045417 (1991-09-01), Okamoto

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