Wavelength-tunable, distributed bragg reflector laser having sel

Details Wavelength-tunable, distributed bragg reflector laser having sel Wavelength-tunable, distributed bragg reflector laser having sel

1995-02-02

1996-12-03

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 96, 372102, 372 20, H01S 319

Patent

active

055815723

ABSTRACT:
A wavelength-tunably distributed Bragg reflector laser having selectively activated virtual diffraction gratings including a semiconductor guide layer (4) between two other semiconductor confinement layers (6,8) of opposite dopings. A passive part of the laser has sections (SC1, SC2, SC3), each of which include a periodic arrangement (A) spatially modulating the distribution of the carriers or the electric field in the guide layer when a current is injected into the p-n junction formed by the two other layers or where the junction is reverse biased to create a diffraction grating. Each section has an effective optical index cooperating with the corresponding diffraction grating in order to give a predetermined Bragg wavelength for the section.

REFERENCES:
patent: 3814498 (1974-06-01), Tomlinson, III et al.
patent: 4445218 (1984-04-01), Coldren
patent: 4885753 (1989-12-01), Oaki et al.
patent: 5363399 (1994-11-01), Yagi
patent: 5379318 (1995-01-01), Weber
Agrawal, Govind and Dutta, Niloy, "Semiconductor Lasers", Van Nostrand Reinhold, New York, 1993, p. 369.
Y. Tohmori et al., "Broad range wavelength tunable superstructure garting (SSG) DBR lasers", IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, New York, US, pp. 1817-1823.
Y. Kotaki et al. "Wavelength tunable DFB and DBR lasers for coherent optical fibre communications", IEEE Proceedings-J; vol. 138, No. 2, Apr. 1991.
Y. Yoshikuni et al., "Broadly tunable distributed Bragg reflector lasers with a multiple-phase-shift super-structure grating", paper TuC2, p. 8 Proceedings OFC/1ooC'93, San Jose, USA., 21-26 Feb. 1993. IEEE Photonics Techn. Lett., vol. 4, No. 4, Apr. 1992.
R. C. Alferness et al., "Broadly tunable InGaAsP/InP laser made based on vertical coupler filter with 57 nm tuning range", Appl. Phys. Letters, vol. 60, No. 26, 29 Jun. 1992.
A. Takemoto et al., "Dependence of characteristics of buried grating type DFB laser diodes on the coupling constant", Technical Digest, 12 IEEE International Semiconductor Laser Conference, Sep. 92, Davos, Switzerland, paper E-3.
W. Streifer et al., "Effect of external reflectors on longitudinal modes of distributed feedback lasers", IEEE J. Quantum Electron., QE-11 (1975), p. 154. (no month).
K. Utaka et al., "Analysis of quarter wave shifted DGB lasers", Electron., Lett., 20 (1984), p. 326. (no month).
H. Kogelnik et al., "Coupled wave theory of distributed feedback lasers", J. Appl. Phys 43 (1972), p. 2327. (no month).
Y. Nakano et al., Appl. Phys. Lett., 55 (1989), p. 1606; same authors: Extended Anstracts, 1988 International Conference on Solid State Devices and Materials, Tokyo, 1988, paper D-4-4. (no month).
B. Borchert et al., IEEE Photon. Technol. Lett., 3 (1991), p. 955. (no month).
W. T. Tsang et al., IEEE Photon. Technol. Lett., 4 (1992), p. 212. (no month).
K. Kudo et al., "Reduction of effective linewidth enhancement factor of DFB laser with complex coupling coefficients", IEEE Photon. Technol. Lett., 4 (1992), p. 531. (no month).
Y. Luo et al., "Fabrication and characteristics of gain coupled DFB semiconductor lasers with a corrugated active layer", IEEE J. Quantum Electron., 7 (1991), p. 1724. (no month).
J. Charil et al., "Extremely low threshold operation of 1.5 .mu.m GaInAsP/InP buried ridge stripe laser", Electron. Lett. 25 (1989), p. 1477. (no month).
C. Kazmierski et al., "Universal iron behavior in Zn-, Cd-and Be-doped p-type InP", J. of crystal growth 116 (1992), p. 75. (no month).
M. T. Camargo Silva et al., "MMIC Based Optical Modulator Design", 1992 IEEE MTT-S International Microwave Symposium Digest, New York, pp. 571-574. (no month).
Koch, Thomas L., "Novel Laser Devices", Proceedings of the 13th IEEE International Semiconductor Laser Conference, Sep. 21-25, 1992, Takamatsu, Japan. (no month).

Affiliated with

Also associated with

Rating

Wavelength-tunable, distributed bragg reflector laser having sel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wavelength-tunable, distributed bragg reflector laser having sel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wavelength-tunable, distributed bragg reflector laser having sel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-791888