Method of manufacturing semiconductor device terminal having a g

Details Method of manufacturing semiconductor device terminal having a g Method of manufacturing semiconductor device terminal having a g

1991-03-05

1994-03-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 148DIG131, H01L 21441

Patent

active

052984591

ABSTRACT:
A semiconductor device provided with an external connection terminal composed of a metal bump electrode. A first metal film is formed on the entire surface of the semiconductor device, a second metal film on the first metal film, and a third metal film on the second metal film. A resist film is selectively formed on the third metal film. A metal bump electrode is formed on the third metal film, at a portion at which the resist film is not present by electrolytic plating while using the third metal film as a conductive plating electrode and the resist film as a mask. The resist film is removed and the metal films are etched while using the metal bump electrode as a mask.

REFERENCES:
patent: 4787958 (1988-11-01), Lytle
patent: 4880708 (1989-11-01), Sharma et al.
patent: 5108950 (1992-04-01), Wakabayashi et al.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device terminal having a g does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device terminal having a g, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device terminal having a g will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-791409