Method of forming tungsten film

Details Method of forming tungsten film Method of forming tungsten film

1992-10-28

1994-03-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437245, 437200, H01L 2100

Patent

active

052984583

ABSTRACT:
A tungsten film is deposited on a substrate by a CVD process using a source gas comprising WF.sub.6, a silane group compound such as SiH.sub.4, Si.sub.2 H.sub.6, Si.sub.3 H.sub.8 or Si.sub.4 H.sub.10, and hydrogen fluoride or fluorine, at a lower temperature than in the prior art. The resultant tungsten film has low sheet resistance and good step coverage. The tungsten film may be selectively deposited.

REFERENCES:
patent: 4902645 (1990-02-01), Ohba
N. Kobayashi, et al., "Study on Mechanism of Selective Chem. Vap. Deposition of Tungsten", J. Appl. Phys. 69 (1991) p. 1013.
H. Goto et al., Chemical Reaction and Film Characteristics of SiH.sub.2 F.sub.2 Reduced W-CVD Compared with SiH.sub.4 Reduction Process, Advanced Metallization for ULSI Applications, Japan Conference, pp. 37-38, Oct. 28-30, 1991.

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