Process for simultaneously fabricating isolation structures for

Details Process for simultaneously fabricating isolation structures for Process for simultaneously fabricating isolation structures for

1993-04-08

1994-03-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 62, 148DIG50, H01L 2176

Patent

active

052984508

ABSTRACT:
An isolation structure for bipolar and CMOS circuits formed during the same processing steps to optimize the integration of bipolar and CMOS circuits. A deep trench (46) is formed in a semiconductor circuit for providing deep isolation for bipolar circuits. A shallow recess (56) is then formed, which also forms a stepped sidewall structure of the deep trench. The recess (56) and the trench (46) are covered by an insulating oxide (60), and thereafter filled with an undoped polysilicon (62) to form the different isolating structures for the different types of circuits.

REFERENCES:
patent: 4238278 (1980-12-01), Antipov
patent: 4473598 (1984-09-01), Ephrath et al.
patent: 4746963 (1988-05-01), Uchida et al.
patent: 4797372 (1989-01-01), Verret et al.
patent: 4808550 (1989-02-01), Fukushima
patent: 4866004 (1989-09-01), Fukushima

Affiliated with

Also associated with

Rating

Process for simultaneously fabricating isolation structures for does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for simultaneously fabricating isolation structures for , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for simultaneously fabricating isolation structures for will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-791255