Method of making high transconductance heterostructure field eff

Details Method of making high transconductance heterostructure field eff Method of making high transconductance heterostructure field eff

1991-06-03

1994-03-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437976, 437133, 148DIG97, H01L 21265

Patent

active

052984419

ABSTRACT:
A high transconductance HFET (21) utilizes nonalloy semiconductor materials (26) to form a strained channel layer (26) that has a deep quantum well (38). The materials utilized for layers adjacent to the channel layer (26) apply strain to the channel layer (26) and create an excess of high mobility carriers in the channel layer (26). The materials also form a deep quantum well (38) that confines the high mobility carriers to the channel (26). The high mobility carriers and the high confinement provide an HFET (21) that has high transconductance, high frequency response, and sharp pinch-off characteristics.

REFERENCES:
patent: 4568958 (1986-02-01), Baliga
patent: 4695857 (1987-09-01), Baba et al.
patent: 4745447 (1988-05-01), Chen et al.
patent: 4829346 (1989-05-01), Kasahara et al.
patent: 4885614 (1989-12-01), Furukawa et al.
patent: 5048036 (1991-09-01), Scifres et al
patent: 5049951 (1991-09-01), Goronkin et al.
patent: 5060030 (1991-10-01), Hoke
patent: 5081511 (1992-01-01), Tehrani et al.
patent: 5111255 (1992-05-01), Kiely et al.

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