Silicon-based microlaser by doped thin films

Details Silicon-based microlaser by doped thin films Silicon-based microlaser by doped thin films

1992-09-15

1994-11-29

Scott, Jr., Leon

Coherent light generators

Particular active media

372 7, 372 69, 372 44, 372 50, 372 68, H01S 314

Patent

active

053696573

ABSTRACT:
A silicon-based microlaser formed of rare-earth-doped CaF.sub.2 thin films has a semiconductor substrate material (240) and a CaF.sub.2 film layers (234) grown on semiconductor substrate material (240), The CaF.sub.2 film layer (234) is doped with a predetermined amount of rare-earth-dopant that is sufficient to cause a spectral emission from the CaF.sub.2 film layer (234) having a narrow linewidth when the CaF.sub.2 film layer (234) is optically or electrically pumped.

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L. E. Bausa, et al., "Effect of Nd3+ Concentration on the Emission Spectra of CaF.sub.2 : Nd Layers Grown by Molecular-Beam Epitaxy," Journal of Applied Physics, vol. 70, No. 8, 15 Oct. 1991, pp. 4485-4489.
C. Lei, et al., "Optical Gain Enhancement in Fabry-Perot Microcavity Lasers," Journal of Applied Physics, vol. 71, No. 6, 15 Mar. 1992, pp. 2530-2535.
C. C. Cho, et al., "Photoluminescence from Submicron CaF.sub.2 : Nd Films Grown Epitaxially on Si(111) and Al(111)/Si(111)," Applied Physics Letters, vol. 61, No. 15, 12 Oct. 1992, pp. 1757-1759.
C. C. Cho, et al. "Epitaxial Growth of an Al/CaF.sub.2 /Al/Si(111) Structure," Applied Physics Letters, vol. 61, No. 3, 20 Jul. 1992, pp. 270-272.

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