Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1990-02-12

1991-06-11

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, 357 16, 357 17, H01S 319

Patent

active

050238809

ABSTRACT:
A semiconductor laser device including a semiconductor substrate of a first conductivity type, a double hetero structure, including of a lower cladding layer of the first conductivity type, an active layer, and a first upper cladding layer of In.sub.1-w (Ga.sub.1-y Al.sub.y)wp of the second conductivity type formed on the semiconductor substrate, a second upper cladding layer of In.sub.1-w (Ga.sub.1-w Al.sub.z).sub.w P of the second conductivity type partially formed on the first upper cladding layer, a first contact layer of In.sub.1-w (Ga.sub.1-s Al.sub.s).sub.w P (0<s<z.ltoreq.1) of the second conductivity type formed on the second upper cladding layer, and a second contact layer of GaAs of the second conductivity type formed on the first upper clad layer and the first contact layer. The value of y in In.sub.1-w (Ga.sub.1-y Al.sub.y).sub.w P which constitutes the first upper cladding layer, and the value of z in In.sub.1-w (Ga.sub.1-z Al.sub.z).sub.w P which constitutes the second upper cladding layer satisfy a relation 0.6.ltoreq.y<z.ltoreq.1.

REFERENCES:
patent: 4740976 (1988-04-01), Kajimura et al.
patent: 4845724 (1989-07-01), Hayakawa et al.

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-789723