Semiconductor device

Details Semiconductor device Semiconductor device

1994-08-23

1996-05-28

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257108, 257469, 257470, 257551, 257360, H01L 31058

Patent

active

055214215

ABSTRACT:
In a semiconductor device with a power element on a substrate, a temperature monitor element is formed on the same substrate. In case of thermal overload in the power element, a signal from the temperature monitor element can be used for turning the power element off. For enhanced temperature response, the temperature monitor element is in part surrounded by the power element or/and disposed beneath an integrated, thermally conductive extension of an electrode of the power element.

REFERENCES:
patent: 5097302 (1992-03-01), Fujihira et al.
patent: 5389813 (1995-02-01), Schwob
"Smart-Sipmos--An Intelligent Power Switch" by Glogolja et al.; pp. 429-433, Conf. Rec. IEEE Ind.Appl.Soc. Annu. Meet. Jan. (1986).
"Self-Thermal Protecting Power MOSFET's" by Yamaoka et al.; SAE Technical Paper Series, pp. 41-46; Reprinted from SP-737-Sensors and Actuators--Jan. 1988; Int'l. Congress and Exposition, Detroit, Michigan, Feb. 29-Mar. 4, 1988.

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