Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1994-11-29
1996-05-28
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 54, 257 55, 257 56, 257 58, 136258, H01L 2904, H01L 31036, H01L 310376, H01L 3120
Patent
active
055214002
ABSTRACT:
A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconductor layer member having at least one intrinsic, non-single-crystal semiconductor layer, and a second conductive layer disposed on the non-single-crystal semiconductor layer. The intrinsic non-single-crystal semiconductor layer contains sodium and oxygen in very low concentrations where each concentration is 5.times.10.sup.18 atoms/cm.sup.3 or less.
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Ferguson Jr. Gerald J.
Mintel William
Semiconductor Energy Laboratory Co,. Ltd.
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