Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1995-06-07
1996-12-03
Karlsen, Ernest F.
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
G01R 31302
Patent
active
055811949
ABSTRACT:
The method and apparatus of the present invention provides a fast, efficient, non-contact, non-destructive means of characterizing surface and near-surface regions of a semiconductor substrate subjected to high-energy (MeV) ion implantation through interpretation of a graph of surface charge versus modulation frequency of incident monochromatic light. The near-surface region of a semiconductor substrate is defined to extend from just below the surface of the semiconductor substrate to a depth of 0.8 .mu.m. Similar to existing SPV/SCI techniques, a semiconductor substrate is radiated with high photon energy such that energy bands become almost flat at the surface of the semiconductor substrate. Surface photovoltages produced at different modulation frequencies of incident light pulses are measured and recorded. Resultant surface charges are derived from measured surface photovoltages, and a graph is made of surface charge versus the modulation frequency of incident light pulses. Structural and material defects affecting the characteristics of the surface and near-surface regions of the semiconductor substrate may then be diagnosed from the resulting graph.
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P. Edelman et al., "Surface Charge Imaging in Semiconductor Wafers by Surface Photovoltage (SPV)," Proceedings of the Materials Research Society Meeting, San Francisco, California (Apr., 1992).
Borland et al., "MeV Implantation Technology: Next Generation Manufacturing with Current-Generation Equipment," Solid State Technology, (Dec., 1993), pp. 1-8.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Karlsen Ernest F.
Kobert Russell M.
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