Semiconductor device having wiring and contact structure

Details Semiconductor device having wiring and contact structure Semiconductor device having wiring and contact structure

Filed on

1995-08-04

Date issued

1996-12-03

Examiner

Crane, Sara W.

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Combined with electrical contact or lead

SubSubClass

Of specified material other than unalloyed aluminum

Other Related Categories

257296, 257774, 257508, 257313, 257306, H01L 2350, H01L 2190

Type

Patent

Status

active

Patent number

055811248

Description

ABSTRACT:
In a wiring and contact structure of a semiconductor device, a contact hole is formed to pass trough an interlayer insulating film and a gate oxide film and the contact hole is filled with a conductive material layer which projects from the interlayer insulating film. A first wiring layer is formed on the conductive material layer so as to partially overlap the contact hole, and an first insulating film is formed between the conductive material layer and the first wiring layer. A second insulating film having the same pattern as that of the first wiring layer is formed on the first wiring layer, and a third insulating film is formed as a side wall covering a side surface of the first wiring layer. A second wiring layer is formed on the conductive material layer and the first wiring layer in such a manner that the second wiring layer is in contact with the conductive material layer and partially overlaps the first wiring layer but is electrically insulated from the first wiring layer by the second and third insulating films.

REFERENCES:
patent: 4754313 (1988-06-01), Takemae et al.
patent: 5172202 (1992-12-01), Kazuo

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