Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-03-18
1984-09-18
Saba, William G.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29580, 148174, 148175, 156643, 156649, 156653, 156657, 357 49, 357 50, H01L 2131, H01L 2176
Patent
active
044715250
ABSTRACT:
Disclosed is a method for manufacturing a semiconductor device of high reliability, high performance and high integration with high yield. The method of this invention has the steps of forming at least one groove in a semiconductor substrate, forming a non-single-crystalline semiconductor film to cover an entire surface of the semiconductor substrate including an inner surface of the groove, selectively etching the non-single-crystalline semiconductor film so as to leave the non-single-crystalline semiconductor film on at least a side wall of the groove, and forming an oxide isolation layer in the groove by thermal oxidation.
REFERENCES:
patent: 4222792 (1980-09-01), Lever et al.
patent: 4238278 (1980-12-01), Antipov
patent: 4356211 (1982-10-01), Riseman
Patent Abstracts of Japan, vol. 3, No. 38, Mar. 30, 1979, p. 45E101, JP-A-54-16189.
Patent Abstracts of Japan, vol. 3, No. 22, Feb. 24, 1979, p. 35E93 JP-A-54-589.
IMB Tech. Discl. Bull. vol. 22, No. 11, Apr. 1980, N.Y., R. D. Isaac "Fabrication Process for Full ROX Isolation without a Bird's Beak" pp. 5148 to 5151, *p. 5150, third to fifth paragraphs.
IBM Technical Disclosure Bulletin, vol. 20, No. 1, Jun. 1977, pp. 144-145 "Recessed Oxide Isolation Process" by S. A. Abbas.
IBM Technical Disclosure Bulletin, vol. 22, No. 7, Dec. 1979, pp. 2749-2750, "Self-aligned Recessed Oxide . . ." by C. E. Benjamin.
Kenney, D. M., "Self-aligned U-Groove . . ." IBM Tech. Discl. Bull., vol. 22, No. 10, Mar. 1980, pp. 4448-4449.
Saba William G.
Tokyo Shibaura Denki Kabushiki Kaisha
LandOfFree
Method for manufacturing semiconductor device utilizing two-step does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device utilizing two-step, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device utilizing two-step will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-787487