Patent
1990-04-06
1991-06-11
Mintel, William
357 69, 357 80, 357 74, H01L 2348, H01L 2944, H01L 3902, H01L 2301
Patent
active
050236970
ABSTRACT:
A semiconductor device in accordance with the present invention includes a semiconductor chip which is bonded to a die pad using a solder having a liquidus temperature of 370.degree. C. or less. A copper ball is moved to contact an Al electrode pad on the semiconductor chip in less than 150 ms after formation of the ball. Plastic deformation takes place so that the copper ball is pressed against the aluminum electrode pad and the height of the copper ball becomes 25 .mu.m or less. It is possible to firmly wire the Al pad on the semiconductor chip and the inner lead frame without cracking the glass coating by utilizing a silver plating on the die pad and an Au-metallized layer on the rear side of the semiconductor chip. It is also possible to decrease the work hardening property of the Cu ball and prevent Al exudation when the Cu ball is bonded to the Al electrode pad.
REFERENCES:
patent: 4676827 (1987-06-01), Hosada et al.
patent: 4872047 (1989-10-01), Fister et al.
Tsumura et al., "Fundamental Study of . . . Its Reliability", IMC 1988 Proceedings, Tokyo, 1988, pp. 388-392.
Onuki et al., "Investigation . . . Aluminum Electrodes", 1987 IEEE, vol. CHMT-12, No. 4, Dec. 1987, pp. 550-555.
Sakamoto et al., "Development of Copper Wire . . . Production", pp. 31-36.
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
Potter R.
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