Semiconductor device having composite substrate formed by fixing

Details Semiconductor device having composite substrate formed by fixing Semiconductor device having composite substrate formed by fixing

1989-02-03

1991-06-11

James, Andrew J.

357 234, 357 38, 357 39, 357 91, H01L 2904, H01L 2910, H01L 2974

Patent

active

050236962

ABSTRACT:
A semiconductor element is formed in a composite substrate constructed by fixing two semiconductor substrates in close contact with each other, and crystal defects are formed in that portion of at least one of the two semiconductor substrates which lies near the junction plane of the two semiconductor substrates. The crystal defects act as the center of the recombination of excess minority carriers accumulated in an active region of the semiconductor element.

REFERENCES:
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patent: 4534804 (1985-08-01), Cade
patent: 4587713 (1986-05-01), Goodman et al.
patent: 4632712 (1986-12-01), Fan et al.
patent: 4684964 (1987-08-01), Pankove et al.
patent: 4766482 (1988-08-01), Smeltzer et al.
Mogro-Campero et al., "Temperature Behavior and Annealing of Insulated Gate Transistors Subjected to Localized Lifetime Control by Proton Implantation", Solid-State Electronics, vol. 30, No. 2, pp. 185-188, 1987.

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