Semiconductor device

Details Semiconductor device Semiconductor device

1989-01-31

1991-06-11

Jackson, Jr., Jerome

357 43, 357 46, H01L 2972

Patent

active

050236873

ABSTRACT:
A complementary semiconductor device is disclosed having a substrate and a four layer structure of pnpn provided on the substrate wherein the first three layers constitute a pnp-type bipolar transistor and the second to the fourth layer constitute an npn-type bipolar transistor. According to the present invention, the pnp- and npn-type transistor which are disposed on different portions of a principal surface of the substrate, respectively, can be produced concurrently by crystal growth and thus production steps are simple and yield is remarkably improved.

REFERENCES:
patent: 4677455 (1987-06-01), Okajima
patent: 4807008 (1989-02-01), Chang et al.
patent: 4821090 (1989-04-01), Yokoyama

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