1989-06-28
1991-06-11
Hille, Rolf
357 231, 357 59, H01L 2978, H01L 29100, H01L 29040
Patent
active
050236792
ABSTRACT:
A semiconductor device comprises a MOSFET of LDD structure, in which the gate electrode structure comprises an oxide film interposed between a poly-Si layer and a refractory metal layer or a metal silicide. The oxide film prevents the metal or metal silicide from being diffused into the gate oxide film during the heating step included in the process of manufacturing the semiconductor device. Also, a side wall spacer is formed of poly-Si to achieve an electrical connection between the poly-Si layer and the layer of the metal having a high melting point or of the metal silicide so as to constitute a part of the gate electrode.
REFERENCES:
patent: 4700215 (1987-10-01), McPherson
patent: 4807013 (1989-02-01), Monocha
Huang et al., "A Novel Submicron LDD Transistor with Inverse-T Gate Structure," Technical Digest of IEDM, pp. 742-745, 1986.
Brown Peter Toby
Hille Rolf
Kabushiki Kaisha Toshiba
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