Re-oxidized nitrided oxides and re-annealed nitrided oxides prep

Details Re-oxidized nitrided oxides and re-annealed nitrided oxides prep Re-oxidized nitrided oxides and re-annealed nitrided oxides prep

1994-12-16

1996-05-28

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437239, H01L 21283

Patent

active

055211275

ABSTRACT:
Disclosed are a semiconductor device possessing an insulating film which is a silicon oxide film containing nitrogen formed on a semiconductor substrate, with the hydrogen concentration ([H]) in this oxide film satisfying the condition of ##EQU1## where m.congruent.2.0.+-.0.4, n.congruent.2.5.+-.0.5

REFERENCES:
Hori et al. IEDM 1987, Paper No. 26.2, pp. 570-573 (Dec. 1987).
Hori et al., IEEE Electron Device Letts., vol. 9, No. 4, pp. 168-170 (1988).
Lai et al., IEDM 1983, Paper No. 8.4, pp. 190-193 (1983).
Yankova et al., Solid State Electronics, vol. 30, No. 9, pp. 939-946 (1987).
Wu et al., Ext. Abs., vol. 88-1, Electrochem. Soc., May 15-20, 1988, pp. 96-97.
Shih et al., Ext. Abs., vol. 88-1, Electrochem. Soc., May 15-20, 1988, pp. 83-84.
Shih et al., IEEE Trans. on Electron Devices, vol. 35, No. 12, p. 2438 (1988).
Wright et al., IEEE Trans. on Electron Devices, vol. 35, No. 12, pp. 2438-2439 (1988).
Moslehi, "Rapid Thermal Processing of Electronic Materials," Syd Wilson et al., eds., pp. 73-87, Mat. Res. Soc. (1987).
Moslehi et al., Appl. Phys. Lett., vol. 47, No. 10, pp. 1113-1115 (1985).
Nulman et al., Appl. Phys. Lett., vol. 47, No. 2, pp. 148-150 (1985).
Hori et al., IEEE Electron Device Letts., vol. EDL-7, No. 12, pp. 669-671 (1986).
Hori et al., IEEE Trans. on Electron Devices, vol. ED-34, No. 11, pp. 2238-2245 (1987).
Nulman, Ext. Abs., vol. 88-1, Electrochem. Soc., May 15-20, 1988, p. 91.
Chang et al., Ext. Abs., vol. 88-1, Electrochem Soc., May 15-20, 1988, pp. 89-90.
Dunham et al., Ext. Abs., vol. 88-1, Electrochem Soc., May 15-20, 1988, pp. 92-93.
Sundaresan et al., IEEE Trans., pp. 1223-1226 (1986).
Moslehi et al., Appl. Phys. Lett., vol. 47, No. 12, pp. 1353-1355 (1985).
Lai et al., J. Appl. Phys., vol. 52, No. 9, pp. 5691-5693 (1987).
Lai et al., J. Electrochem. Soc., vol. 129, No. 9, pp. 2042-2044 (1982).
Hori et al., IEEE VLSI Symp. Tech, Dig., pp. 63-64 (1987).
Hori et al., Appl. Phys. Lett, vol. 52, No. 9, pp. 736-738 (1988).

Affiliated with

Also associated with

Rating

Re-oxidized nitrided oxides and re-annealed nitrided oxides prep does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Re-oxidized nitrided oxides and re-annealed nitrided oxides prep, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Re-oxidized nitrided oxides and re-annealed nitrided oxides prep will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-786447