Semiconductor device

Details Semiconductor device Semiconductor device

1989-10-04

1991-06-11

Hille, Rolf

357 16, H01L 29161, H01L 2980

Patent

active

050236750

ABSTRACT:
A semiconductor device having a heterojunction and utilizing a two-dimensional electron gas formed at said the heterojunction comprises a substrate of a semi-insulating material, a first semiconductor layer of undoped indium gallium arsenide formed on the substrate, a second semiconductor layer of n-type indium aluminium arsenide formed on the first semiconductor layer and defining the heterojunction between the first semiconductor layer and the second semiconductor layer, the second semiconductor layer including an exposed region defining an exposed top surface, a third semiconductor layer of n-type gallium arsenide antimonide formed on the second semiconductor layer and having a window defined therein so as to expose the top surface of the exposed top surface region, a gate electrode formed in self-alignment with the window and in contact with the exposed top surface region of the second semiconductor layer, and ohmic electrodes formed on the cap layer in ohmic contact therewith.

REFERENCES:
patent: 4635343 (1987-01-01), Kuroda
patent: 4733283 (1988-11-01), Kuroda
patent: 4743951 (1988-05-01), Chang et al.
patent: 4761620 (1988-08-01), Bar-Joseph et al.
patent: 4764796 (1988-08-01), Sasaki et al.
C. B. Cooper, III et al., "Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devices," Applied Physics Letters, vol. 51, No. 26, Dec. 28, 1987, pp. 2225-2226.
A. Fathimulla et al., "High-Performance InAlAs/InGaAs HEMT's and MESFET's," IEEE Electron Device Letters, vol. 9, No. 7, Jul. 1988, pp. 328-330.

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