Fishing – trapping – and vermin destroying
Patent
1995-06-05
1996-05-28
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437915, 437918, H01L 218244
Patent
active
055211178
ABSTRACT:
A compact MOS type active device is constructed at least partially in an opening in an insulation layer, such as an oxide layer, above a portion of a semiconductor substrate forming a first source/drain region of the MOS type active device. A semiconductor material, on the sidewall of the opening, and in electrical communication with the portion of the substrate forming the first source/drain region of the device, comprises the channel portion of the MOS device. A second source/drain region, in communication with an opposite end of the channel, is formed on the insulation layer adjacent the opening and in electrical communication with the channel material in the opening. A gate oxide layer is formed over the channel portion and at least partially in the opening, and a conductive gate electrode is then formed above the gate oxide. In this embodiment, the memory transistors are connected to the Vcc bus by resistors.
REFERENCES:
patent: 5112765 (1992-05-01), Cederbaum et al.
patent: 5159430 (1992-10-01), Manning et al.
patent: 5168076 (1992-12-01), Lee et al.
patent: 5177030 (1993-01-01), Godinho et al.
patent: 5293053 (1994-03-01), Malhi et al.
patent: 5381046 (1995-01-01), Cederbaum et al.
Chaudhari Chandra
LSI Logic Corporation
Taylor John P.
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