Process for forming a butting contact through a gate electrode

Details Process for forming a butting contact through a gate electrode Process for forming a butting contact through a gate electrode

1995-03-16

1996-05-28

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 47, 437228, 148DIG20, H01L 2170, H01L 2700

Patent

active

055211135

ABSTRACT:
An SRAM cell includes a semiconductor substrate doped with a dopant of a first type, a highly doped region in the substrate implanted with a dopant of opposite type, a gate oxide layer on the substrate, a first conductive layer formed upon the gate oxide layer, a dielectric layer deposited over the first conductive layer, an opening in the gate oxide layer, the first conductive layer, and the dielectric layer, and a second conductive layer deposited upon the dielectric layer.

REFERENCES:
patent: 4785341 (1988-11-01), Ning et al.
patent: 5422499 (1995-06-01), Manning

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