Phase-shift mask blank and process for the production thereof co

Details Phase-shift mask blank and process for the production thereof co Phase-shift mask blank and process for the production thereof co

1997-03-14

1999-09-21

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

428432, G03F 900

Patent

active

059552239

ABSTRACT:
PURPOSE: To provide the phase shift mask which can be produced while the generation of microdefects is suppressed with relatively simple stages and with which pattern transfer with a high resolution is possible and the phase shift mask blank which is the blank material thereof.
CONSTITUTION: The mask patterns to be formed on a transparent substrate 1 of this phase shift mask are composed of light transparent parts 4 which allow the transmission of light of the intensity substantially contributing to exposing and light translucent parts 2 which allow the transmission of the light of the intensity substantially contributing to exposing. The phase shift mask is so formed that the phase of the light past the light translucent parts 2 and the phase of the light past the light transparent parts 4 are varied by shifting the phase of the light passing the light translucent parts 2, by which the light rays passing near the boundary parts of the light transparent parts 4 and the light translucent parts 2 are negated with each other and the contrast in the boundary parts is well maintained. The light translucent parts 2 are composed of thin films consisting of materials consisting of oxygen, molybdenum and silicide as main constituting elements.

REFERENCES:
patent: 5415953 (1995-05-01), Alpay et al.
patent: 5474864 (1995-12-01), Isao et al.
patent: 5482799 (1996-01-01), Isao et al.
patent: 5538816 (1996-07-01), Hashimoto et al.
patent: 5605776 (1997-02-01), Isao et al.
patent: 5629114 (1997-05-01), Isao et al.
Shih and Dove J. Vac. Sci. Technol. B 12(1), Jan./Feb. 1984, pp. 32-36 Thin Film materials for the preparation of attenuating phase shift masks.
Patent Abstracts of Japan vol. 095, No. 003, Apr. 1995.

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