Method of forming a semiconductor material having a substantiall

Details Method of forming a semiconductor material having a substantiall Method of forming a semiconductor material having a substantiall

1995-09-12

1996-12-03

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437174, 437233, 437942, 437967, H01L 21324

Patent

active

055808204

ABSTRACT:
A method for forming a semiconductor material involves forming an i-type non-single crystalline layer on a substrate and crystallizing the semiconductor material by irradiation with a light having a wavelength in the range of 250 to 600 nm. Desirably, the crystals of the semiconductor material extend in column form approximately perpendicular to the substrate. Preferably, the i-type layer is doped with a recombination center neutralizer selected from hydrogen and a halogen element and the concentration of impurities forming recombination centers, such as oxygen, nitrogen, carbon, phosphorus, and boron, are maintained at 1 atomic % or less.

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