Method for the fabrication of a semiconductor memory device havi

Details Method for the fabrication of a semiconductor memory device havi Method for the fabrication of a semiconductor memory device havi

1995-05-03

1996-12-03

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

055808115

ABSTRACT:
A method for the fabrication of a semiconductor device, capable of reducing the step between the cell region and the peripheral circuit region by forming a storage electrode having a similar height to that of a bit line in a region devoid of the bit line, and of establishing a cylindrical storage electrode without using an additional storage electrode mask by making an etch barrier layer over the bit line serve as a self-aligned etch barrier when a storage electrode contact hole is formed by an etch process using a storage electrode contact hole mask. It can ensure a sufficient allowance of depth of focus for subsequent lithography processes in addition to being simple and improving reliability.

REFERENCES:
patent: 5250457 (1993-10-01), Dennison et al.
patent: 5338700 (1994-08-01), Dennison et al.
patent: 5409855 (1995-04-01), Jun
patent: 5432116 (1995-07-01), Kenm et al.
U.S. patent Application Ser. No. 08/491,702 dated 1995 name to Suk Soo Kim.
U.S. patent Application Ser. No. 08/297,759 dated 1994 name to Kim et al.

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