Method of fabricating a buried contact structure for SRAM

Details Method of fabricating a buried contact structure for SRAM Method of fabricating a buried contact structure for SRAM

1995-01-06

1996-12-03

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 52, 437200, 148DIG19, H01L 21441, H01L 218244

Patent

active

055808069

ABSTRACT:
A buried contact structure formed on a semiconductor substrate. A single polysilicon layer is formed on a field oxide layer. The polysilicon layer is patterned and etched to form an interconnect layer. A silicide layer is formed on the sidewall of the interconnect layer. The silicide layer connects a buried contact region with the interconnect layer to make electrical contact between the interconnect layer and a source/drain region.

REFERENCES:
patent: 4746219 (1988-05-01), Holloway et al.
patent: 5234856 (1993-08-01), Gonzalez
patent: 5372956 (1994-12-01), Baldi

Affiliated with

Also associated with

Rating

Method of fabricating a buried contact structure for SRAM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a buried contact structure for SRAM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a buried contact structure for SRAM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-785106