Method of making SOI Transistor

Details Method of making SOI Transistor Method of making SOI Transistor

1994-05-18

1996-12-03

Fourson, George

Fishing, trapping, and vermin destroying

437 21, H01L 21265

Patent

active

055807976

ABSTRACT:
A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

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