Fabrication method for integrated structure such as photoconduct

Details Fabrication method for integrated structure such as photoconduct Fabrication method for integrated structure such as photoconduct

1995-02-15

1996-12-03

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437974, 250332, 257442, H01L 3118, H01L 2500, H01L 3100

Patent

active

055807950

ABSTRACT:
A photoconductive isotype heterojunction impedance-matched infrared detector has blocking contacts which are positioned on the bottom side of the detector. The blocking contacts prevent transfer of minority carriers from the active region of the detector, thereby extending the lifetime of these carriers. The detector is formed by first fabricating an active layer followed by an isotype blocking layer on a growth substrate. These layers are etched and appropriate passivation layers and contacts are applied. A mechanical supporting substrate is applied to the detector and the growth substrate is removed. Etch stop holes are formed which extend into the active layer of the detector. A precision thickness of the active layer required in an impedance-matched detector design is produced by thinning the active layer in an etching process until the surface of the active layer reaches the etch stop hole. The detector produced in accordance with the structure and methods set forth herein is highly suitable for use in an array of such detectors which can form an infrared focal plane array.

REFERENCES:
patent: 3452198 (1969-06-01), White
patent: 3575740 (1971-04-01), Castrucci et al.
patent: 3884733 (1975-05-01), Bean
patent: 4050979 (1977-09-01), Smeltzer et al.
patent: 4355456 (1982-10-01), Harnagel et al.
patent: 4380056 (1983-04-01), Parrish et al.
patent: 4512847 (1985-04-01), Brunsch et al.
patent: 4533933 (1985-08-01), Pellegrini et al.
patent: 4720738 (1988-01-01), Simmons
patent: 4782028 (1988-11-01), Farrier et al.
patent: 4783594 (1988-11-01), Schulte et al.
patent: 4901084 (1990-02-01), Huguenin et al.
patent: 4910154 (1990-03-01), Zanio et al.
patent: 4914296 (1990-04-01), Reinhold et al.
patent: 4956555 (1990-09-01), Woodberry
patent: 4965649 (1990-10-01), Zanio et al.
patent: 4970567 (1990-11-01), Ahlgren et al.
patent: 5081063 (1992-01-01), Vonno et al.
patent: 5091330 (1992-02-01), Cambou et al.
patent: 5109158 (1992-04-01), Horne
patent: 5122669 (1992-06-01), Herring et al.
patent: 5132761 (1992-07-01), York et al.
patent: 5132763 (1992-07-01), Maserjian
patent: 5145795 (1992-09-01), Sanders et al.
patent: 5179283 (1993-01-01), Cockrum et al.
patent: 5385632 (1995-01-01), Goossen
D. K. Arch, R. A. Wood and D. L. Smith, "High Responsivity HgCdTe Heterojunction Photoconductor", J. Appl. Phys. 58, pp. 2360-2370 (1985).
P. R. Norton, "Infrared image sensors", Optical Engineering, Nov. 1991, vol. 30 No. 11, pp. 1649-1663.
D. L. Spears and P. E. Duffy, "HgCdTe Resonant-Optical-Cavity Infrared Detectors", Proc. IRIS Detector, 1985, vol. II, pp. 95-122.

Affiliated with

Also associated with

Rating

Fabrication method for integrated structure such as photoconduct does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method for integrated structure such as photoconduct, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method for integrated structure such as photoconduct will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-784994