Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1989-05-30

1992-02-11

James, Andrew J.

357 42, 357 51, 357 59, H01L 2702

Patent

active

050879561

ABSTRACT:
An SRAM including a memory cell having a high-resistance load element. The load element is formed from a polysilicon film, and an impurity is introduced into at least a part of the polysilicon film for the purpose of increasing the threshold voltage of a parasitic MISFET formed using the load element as its channel region. Alternatively, the deposition of the polysilicon film is carried out at a relatively high temperature, thereby preventing any increase in the current flowing through the load element, and thus reducing the power dissipation in the SRAM.

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patent: 4814841 (1989-03-01), Masuoka et al.
patent: 4828629 (1989-05-01), Ikeda et al.
patent: 4841481 (1989-06-01), Ikeda et al.
Semiconductor Devices Physics And Technology, S. M. Sze.

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