Method of forming a conductive film on an insulating region of a

Details Method of forming a conductive film on an insulating region of a Method of forming a conductive film on an insulating region of a

Filed on

1994-04-07

Date issued

1996-12-03

Examiner

Pianalto, Bernard

Patent Class

Coating processes

SubClass

Direct application of electrical, magnetic, wave, or...

SubSubClass

Pretreatment of substrate or post-treatment of coated substrate

Other Related Categories

1566431, 20419234, 427124, 427253, 427258, 427264, 427282, 427294, 4273977, 427555, 437173, 437228, 437238, 437241, 437245, B05D 300

Type

Patent

Status

active

Patent number

055806155

Description

ABSTRACT:
A method of forming a conductive film on an insulating region of a substrate wherein a surface of the insulating region formed on the substrate is activated by irradiating the surface with electrons, ions or light. Next, a metal film pattern constituting, for example, an electrical interconnection, is deposited on the surface by applying a selective chemical vapor deposition process using a metal halide gas.

REFERENCES:
patent: 4633035 (1986-12-01), McMonagle
patent: 4663826 (1987-05-01), Baeuerle
Draft of the 3rd International Conference of Chemical Vapor (no date).
Deposition, pp. 270-291, 1972; Jerome J. Cnomo. (No month avail).
RCA Review, pp. 306-316, Jun. 1970; J. W. Shaw and J. A. Amick.
International Electron Devices Meeting 1983, Washington D.C., US, 5th-7th December 1983, pp. 550-553, IEEE, New York, US; T. Moriya et al.: "A planar metallization process--its application to tri-level aluminum interconnection".
Applied Physics Letters, vol. 43, No. 10, 15th Nov. 1983 pp. 946-948, American Institute of Physics, New York, US; B. M. McWilliams et. al.: "Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and samll-scale integrated circuits by . . . ".
Applied Physics Letters, vol. 43, No. 5, 1st Sep. 1983, pp. 454-456, American Institute of Physics, New York, US R. Solanki et al.: "Photodeposition of aluminum oxide and aluminum thin films".

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