Method of diffusing Zn into compound semiconductor

Details Method of diffusing Zn into compound semiconductor Method of diffusing Zn into compound semiconductor

1990-01-04

1991-06-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437160, 437161, 437987, 148DIG95, 372 45, 372 46, H01L 21223

Patent

active

050231995

ABSTRACT:
A method of diffusing Zn into AlGaInP using Al.sub.x G.sub.1-x As (0.ltoreq.x.ltoreq.1) as a diffusion stopping at a position of predetermined depth from the surface of the AlGaInP, or using Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) as a diffusion mask which is disposed on the surface of the AlGaInP.

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patent: 4852110 (1989-07-01), Fujii et al.
patent: 4857971 (1989-08-01), Burnham
patent: 4922499 (1990-05-01), Nitta et al.
Ghandhi et al., "Precisely Controlled . . . GaAs", Applied Physics Letters 38(4), Feb. 1981, pp. 267-269.
Shealy et al., "Open Tube Diffusion . . . Arsenide", IEEE, vol. EDL-1, No. 6, Jun. 1980, pp. 119-121.
Fukuzawa et al., "GaAlAs Buried Multiquantum . . . Disordering", Applied Physics Letters 45 (1), Jul. 1984, pp. 1-3.
Semura et al., "AlGaAs/GaAs . . . Guide", Japanese Journal of Applied Physics, vol. 24, No. 7, Jul. 1985, pp. L548-L550.

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