Method of determining the depth of trenches formed in a semicond

Details Method of determining the depth of trenches formed in a semicond Method of determining the depth of trenches formed in a semicond

1988-12-05

1991-06-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 65, 437228, 156626, G01R 3126, H01L 2166

Patent

active

050231880

ABSTRACT:
In a process for forming trenches in a semiconductor substrate wafer, first trenches are formed in a surface portion of the semiconductor substrate wafer and, at the same time, a plurality of second trenches are formed in a predetermined section of the surface portion such that the area ratio of the second trenches to the portions between the second trenches of the predetermined section may be a predetermined value. Then, a measuring light is irradiated on the predetermined section and the depth of the second trenches is measured on the basis of the intensity of light reflected from the predetermined section to thereby obtain the depth of the first trenches. Thus, the first trenches having a predetermined depth are formed in the surface portion of the semiconductor substrate wafer. This process makes it possible to form trenches in a semiconductor substrate wafer with high precision.

REFERENCES:
patent: 4367044 (1983-01-01), Booth, Jr. et al.
patent: 4611919 (1986-09-01), Brooks, Jr. et al.
patent: 4838694 (1989-06-01), Betz et al.
Kleinknecht et al., J. Electrochem. Soc.: Solid State Science and Technology, v. 125, No. 5 (May 1978), pp. 799-803.

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