Stratified interconnect structure for integrated circuits

Details Stratified interconnect structure for integrated circuits Stratified interconnect structure for integrated circuits

1989-04-13

1992-08-04

Hille, Rolf

357 71, 357 2, H01L 2354

Patent

active

051363615

ABSTRACT:
A low resistance interconnect structure for integrated circuits formed by a composite layer of aluminum below and an amorphous compound of refractory metal and silicon above. In the process of manufacturing the interconnect structure, care must be taken so that an aluminum oxide layer is not formed between the aluminum and compound layers.

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"Aluminum-Silicon Conductor Formation" Leff-IBM Technical Disclosure Bulletin-vol. 12. No. 11 Apr. 1970 p. 1996.

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