Mask for X-ray lityhography and method of manufacturing the same

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430321, 378 35, G03F 900

Patent

active

050231561

ABSTRACT:
A mask for X-ray lithography includes a transparent thin film (1) formed preferably of SiC, an X-ray absorbing pattern (2) formed preferably of Au formed on the surface of the transparent thin film (1) and a support member (3) formed preferably of Si formed on the back surface of the transparent thin film (1). The support member (3) has an opening (4) for exposing therethrough the back surface of the transparent thin film (1). A transparent conductive thin film (5), preferably of In.sub.2 O.sub.3, is formed over the back surfaces of both the exposed transparent thin film (1) and the support member (3) to facilitate relaxation electrification of the transparent thin film (1) as may happen during X-ray exposure thereof.

REFERENCES:
patent: 3873824 (1975-03-01), Bean et al.
patent: 3892973 (1975-07-01), Coquin et al.
patent: 4468799 (1984-08-01), Harms et al.
patent: 4595649 (1986-06-01), Ferguson et al.
patent: 4680243 (1987-07-01), Shimkunas
patent: 4939052 (1990-07-01), Nakagawa
Solid State Technology: "X-Ray Lithography", by R. K. Watts, May 1979, pp. 68-82.
Spie, Submicrom Lithography: "X-Ray Lothography: Fabrication of Masks and Very Large Scale Integrated Devices", by B. B. Triplette et al, vol. 333, 1982, pp. 118-123.
Spie, Electron Beam, X-Ray & Ion-Beam Techniques for Submicrometer Lithographies III: "Defect Repair Techniques for X-Ray Masks", by D. K. Atwood et al, vol. 471, 1984, pp. 127-134.

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