Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-11-03
1996-12-03
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 84, 437 89, C30B 2504
Patent
active
055803814
ABSTRACT:
A crystal forming method comprises disposing, on a surface of a substrate or in recessed portion formed in the substrate having a surface with a low nucleation density, primary seed having a sufficient small volume to singly aggregate and a rectangular prismatic or cubic shape in which all the sides and the bottom are surrounded by an insulator in contact therewith; performing heat treatment for aggregating the primary seed to form monocrystalline seed crystal having controlled plane orientation and in-plane orientation; and selectively growing monocrystal by crystal growth treatment using the seed crystal as starting point.
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H. I. Smith et al., "Oriented crystal growth on amorphous substrates using artificial surface-relief gratings," Applied Physics Letters, vol. 32, No. 6, Mar. 15, 1978, pp. 349-350.
T. Yonehara et al., "Graphoepitaxy of Ge on SiO.sub.2 by solid-state surface-energy-driven grain growth," Applied Physics Letters, vol. 45, No. 6, Sep. 15, 1984, pp. 631-633.
M. W. Geis et al., "Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallization," Applied Physics Letters, vol. 35, No. 1, Jul. 1, 1979, pp. 71-74.
Breneman R. Bruce
Canon Kabushiki Kaisha
Garrett Felisa C.
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