1991-07-15
1992-08-04
Prenty, Mark V.
357 58, 357 4, H01L 2714, H01L 2912, H01L 2712
Patent
active
051363526
ABSTRACT:
This invention discloses an infrared detector which separates current induced by incident gamma ray radiation for use in a radiation environment. The infrared detector includes a semiconductor which includes a first layer heavily doped with n-type atoms, a second undoped layer and a third layer lightly doped with n-type atoms. At least one heavily doped n-type contact region and one heavily doped p-type contact region are embedded in the third layer. Both incident gamma ray photons and infrared photons release charge carriers in the second layer which travel as conduction current through the semiconductor. Since gamma rays are of high energy, they can release electrons from the valence band into the conduction band. When an electron is released from the valence band a hole is generated in its place which acts as current charge carrier. The electron released into the conduction band travels to the first layer and the hole travels to the p-type contact region under the influence of an electric field. An infrared photon, however, will only have enough energy to release an electron in the impurity band of the second layer to the conduction band. Therefore, there is no hole current collected at the p-type contact regions. When an electron is released from the impurity band, an electron from the n-type contact region replaces this electron. Consequently, current induced by gamma and infrared radiation can be separated.
Prenty Mark V.
Schivley G. Gregory
Taylor Ronald L.
TRW Inc.
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