Semiconductor mosfet having a projecting T-shaped portion

Details Semiconductor mosfet having a projecting T-shaped portion Semiconductor mosfet having a projecting T-shaped portion

1990-09-26

1992-08-04

Mintel, William

357 2314, 357 237, 357 59, 357 56, H01L 2978

Patent

active

051363500

ABSTRACT:
A MOSFET having a projecting T-shaped semiconductor portion and a method of manufaturing the same. The MOSFET includes a semiconductor body having a first diffusion region of a first conductivity type, a T-shaped semiconductor portion projecting from the semiconductor body, a gate insulator film formed on a surface of said T-shaped portion, and a gate electrode formed on the gate insulator film. The top of the T provides a means by which contact can easily be made between a highly concentrated impurity region on the projecting portion and an electrode, even if the cross-sectional area of the base of the T is narrow. In a method of manufacturing the MOSFET a mask layer is placed on the semiconductor body with a hole which exposes the semiconductor body, a layer of semiconductor material is provided in the hole and on a portion of the mask layer around the hole so as to form the T-shaped portion, the mask layer is removed by the wet etching, a gate insulating layer is formed onside surfaces of the T-shaped portion, a gate electrode layer is formed on the gate insulating layer, and an impurity is introduced into the top of the T-shaped portion and a predetermined region of the semiconductor body located adjacent to the T-shaped portion.

REFERENCES:
patent: 4568958 (1986-02-01), Baliga
patent: 4625388 (1986-12-01), Rice
patent: 4670768 (1987-06-01), Sunami et al.

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