Closed cell transistor with built-in voltage clamp

Details Closed cell transistor with built-in voltage clamp Closed cell transistor with built-in voltage clamp

1990-10-12

1992-08-04

James, Andrew J.

357 238, 357 13, H01L 2910

Patent

active

051363496

ABSTRACT:
A power transistor takes advantage of the lower breakdown voltage capability of a spherical junction. A clamping region having a spherical shape is provided in the gater region of an enclosed transistor cell. The clamping region has a lower breakdown voltage than do the active portions of the transistor cell. Both a DMOSFET and an IGBT transistor may be provided with the clamping region. The clamping region is a zener diode in the case of the DMOSFET, and is a bipolar junction transistor in the case of the insulated gate bipolar transistor. The clamping region is preferably an island in the center of each cell of a closed cell structure.

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H. Yilmaz et al., Insulated gate Transistor Modeling and Optimization, 1984, pp. 274-277 IEDM.
Victor A. K. Temple, MOS-Controlled Thyristors-A New Class of Power Devices, Oct. 1986, pp. 1609-1618, IEEE, vol. ED-33, No. 10.
H. Yilmaz, Cell Geometry Effect on IGT Latch-Up, IEEE Electron Device Letters, vol. EDL-6, No. 8, Aug. 1985.

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