Method of making a side wall contact with reactive ion etching

Details Method of making a side wall contact with reactive ion etching Method of making a side wall contact with reactive ion etching

1990-07-05

1992-02-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 52, 437 60, 437203, 437919, 437233, H01L 2170

Patent

active

050875884

ABSTRACT:
A semiconductor device comprises a P-type semiconductor substrate having a major surface, an insulating film formed on the major surface of the semiconductor substrate, a first polycrystalline silicon layer formed on the insulating film, an n.sup.+ diffused layer formed on the substrate and adjacent to an end portion of the first polycrystalline silicon layer, and a side wall formed on the end portion of the first polycrystalline silicon layer and formed of a second polycrystalline silicon layer for connecting the end portion of the first polycrystalline silicon layer with the n.sup.+ diffused layer.

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patent: 4657628 (1987-04-01), Holloway et al.
patent: 4678537 (1987-07-01), Ohuchi
patent: 4700457 (1987-10-01), Matsukawa

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