Process for creating fully-recessed field isolation regions by o

Details Process for creating fully-recessed field isolation regions by o Process for creating fully-recessed field isolation regions by o

1991-07-03

1992-02-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 89, 437 90, H01L 2176

Patent

active

050875868

ABSTRACT:
A low-stress process for creating field isolation regions on a silicon substrate that are fully recessed with respect to active areas. The field isolation regions, which have no bird's beak transition regions at their edges, are created by oxidizing an epitaxially-grown layer of silicon, the edges of which are isolated from active area silicon by a an oxide-backed silicon nitride spacer. Each nitride spacer is contiguous with a horizontal silicon nitride layer segment that protects an active area from oxidation during thermal field oxidation. A modification of the process, which requires the deposition of an additional silicon dioxide layer and a wet etch to remove spacers created from that additional layer, further reduces stress during thermal oxidation of the epitaxially-grown silicon layer by providing a void around the periphery of the epitaxial layer for expansion during the thermal oxidation thereof.

REFERENCES:
patent: 4758531 (1988-07-01), Beyer et al.
patent: 4843025 (1989-06-01), Morita

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