Deposition method and apparatus using plasma discharge

Sugar – starch – and carbohydrates – Processes – Carbohydrate manufacture and refining

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118 501, 118720, 118723, 20419232, 20429831, B05D 306, C23C 1600

Patent

active

050874780

ABSTRACT:
A Penning type plasma discharge is formed in an inert gas between a cathode and anode. A carbon source such as graphite is heated to vaporization temperature, and vaporized carbon atoms caused to flow therefrom into the plasma where they are ionized. The inert gas supply is then removed, and the plasma discharge is sustained by the carbon vapor. A substrate is mounted adjacent to, and at the same electrical potential as, the cathode. With the potential of the plasma being maintained at approximately 70 to 100V relative to the substrate, carbon ions are attracted to and deposited on the substrate to form a diamond layer. The initial inert gas plasma discharge may be used to sputter-clean the surface of the substrate prior to diamond deposition. A dopant or other additive material may be injected into the carbon plasma, thereby enabling the fabrication of microelectric or other devices in the diamond layer. A material other than carbon may be vaporized for deposition using the same process as for diamond deposition. In addition, the process may be modified to provide a plasma source of pure ions, which may be extracted and utilized for a purpose other than deposition of a material layer.

REFERENCES:
patent: 3840451 (1974-10-01), Golyanov et al.
patent: 3925187 (1975-12-01), Bernard
patent: 3961103 (1976-06-01), Aisenberg
patent: 4109061 (1978-08-01), Beale et al.
patent: 4170662 (1979-10-01), Weiss et al.
patent: 4310614 (1982-01-01), Connell et al.
patent: 4410758 (1983-10-01), Grolitzer
patent: 4725345 (1988-02-01), Sakamoto et al.
Banks, Bruce A. and Rutledge, Sharon, "Ion Beam Sputter-Deposited Diamondlike Films", J. Vac. Sci. Technol., 21(3), Sep./Oct. 1982, pp. 807-814.
Kawarada, Hiroshi, et al., "Large Area Chemical Vapour Deposition of Diamond Particles and Films Using Magneto-Microwave Plasma", Japanese Journal of Applied Physics, vol. 26, No. 6, Jun. 1987, pp. L1032-L1034.
Matusmoto, Seiichiro, "Synthesis of Diamond Films in a rf Induction Thermal Plasma", Appl. Phys. Lett. 51(10), Sep. 7, 1987, pp. 737-739.
Freeman, J. H., et al., "The Epitaxial Synthesis of Diamond by the Deposition of Low Energy Carbon Ions", Vacuum/vol. 34/Nos. 1-2, pp. 305-314/1984.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Deposition method and apparatus using plasma discharge does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deposition method and apparatus using plasma discharge, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition method and apparatus using plasma discharge will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-780937

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.