Method of making random access memory device having memory cells

Details Method of making random access memory device having memory cells Method of making random access memory device having memory cells

1991-09-27

1992-08-04

Thomas, Tom

Fishing, trapping, and vermin destroying

437 44, 437 47, 437 48, 437 60, 437228, 437235, 437919, H01L 2170

Patent

active

051358816

ABSTRACT:
A random access memory device comprises a plurality of memory cells each having a transfer field effect transistor and a stacked type storage capacitor, a first inter-level insulating film provided between the transfer field effect transistor and the stacked type storage capacitor, and a peripheral circuit having a plurality of component transistors, and each of the component transistors has source and drain regions of an LDD structure, wherein the LDD structure is formed by using side walls made from an insulating film used for the first inter-level insulating film after the formation of the stacked type storage capacitor so that the source region of the transfer field effect transistor is not damaged by bombardment in an anisotropical etching for forming the side walls.

REFERENCES:
patent: 4977099 (1990-12-01), Kotaki

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