Coherent light generators – Particular active media – Semiconductor
Patent
1991-05-23
1992-09-01
Lee, John D.
Coherent light generators
Particular active media
Semiconductor
H01S 319
Patent
active
051446332
ABSTRACT:
A hetero structure semiconductor laser of inner stripe type comprises an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P first cladding layer of a first conductivity type, a Ga.sub.0.5 In.sub.0.5 P or (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P active layer, an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P second cladding layer of a second conductivity type different from the first conductivity type, an AlInP or (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P confinement layer or a SiO.sub.2 having a stripe-like opening and having a refractive index lower than that of the first cladding layer, and an upper cladding layer having a band gap larger than that of the first cladding layer having a refractive index lower than that of the second cladding layer are formed successively on a GaAs substrate. Further, the width of the active layer may be narrowed as a stripe-like structure. Thus, astigmatism of a semiconductor laser becomes smaller and the threshold value of laser action becomes smaller. The manufacturing methods of such a semiconductor laser are also disclosed.
REFERENCES:
patent: 5034957 (1991-07-01), Ohba et al.
patent: 5036521 (1991-07-01), Hatakoshi et al.
patent: 5058120 (1991-10-01), Nitta et al.
Ban Yuzaburo
Kidoguchi Isao
Ohnaka Kiyoshi
Lee John D.
Matsushita Electric - Industrial Co., Ltd.
Wise Robert E.
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